APTGT300A60 APTGT300A60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. q2 0/vb us q1 vb us out g1 g2 e2 e1 out vbus e1 g1 0/vbus g2 e2 s ymbol parameter ma x ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 430 i c continuous collector current t c = 80c 300 i cm pulsed collector current t c = 25c 500 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1150 w rbsoa reverse bias safe operating area t j = 150c 600a @ 550v v ces = 600v i c = 300a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile phase leg trench + field stop igbt ? power modul e
APTGT300A60 APTGT300A60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 350 a t j = 25c 1.4 1.8 v ce(sat) collector emitter saturation voltage v ge =15v i c = 300a t j = 150c 1.5 v v ge(th) gate threshold voltage v ge = v ce , i c = 1.5 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 500 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 24 c oes output capacitance 1.5 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.75 nf t d(on) turn-on delay time 115 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 300a r g = 3.3 ? 55 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time 70 ns e on turn on energy 5.2 e off turn off energy inductive switching (150c) v ge = 15v v bus = 300v i c = 300a r g = 3.3 ? 10.5 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 350 i rm maximum reverse leakage current v r =600v t j = 150c 600 a i f(a v) maximum average forward current 50% duty cycle tc = 80c 300 a t j = 25c 1.5 1.9 v f diode forward voltage i f = 300a v ge = 0v t j = 150c 1.4 v t j = 25c 120 t rr reverse recovery time t j = 150c 210 ns t j = 25c 13.5 q rr reverse recovery charge i f = 300a v r = 300v di/dt =3100a/s t j = 150c 28.5 c
APTGT300A60 APTGT300A60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.13 r thjc junction to case diode 0.21 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline (dimensions in mm)
APTGT300A60 APTGT300A60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 100 200 300 400 500 600 00.511.522.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 100 200 300 400 500 600 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 100 200 300 400 500 600 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 2.5 5 7.5 10 12.5 15 17.5 20 0 100 200 300 400 500 600 i c (a) e (mj) v ce = 300v v ge = 15v r g = 3.3 ? t j = 150c eon eon eoff eoff er 0 10 20 30 40 0 5 10 15 20 25 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 300a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =3.3 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT300A60 APTGT300A60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =150c 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2 v f (v) i c (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 100 200 300 400 500 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =3.3 ? t j =150c t c =85c operating frequency vs collector curren t maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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